現貨供應 高頻三管2SC3356

DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWE LOW ISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
Document . P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
1985?
DCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor digned for low
ise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current charaeristic.
FEATUR
? Low ise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
? High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 G01C)
Colleor to Base Voltage VCBO 20 V
Colleor to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Colleor Current IC 100 mA
Total Power Dissipation PT 200 mW
Junion Temperature Tj 150 G01C
Storage Temperature Tstg G0265 to +150 G01C
ELERICAL CHARAERISTICS (TA = 25 G01C)
CHARAERISTIC SYOL MIN. TYP. MAX. UNIT TT CONDITIONS
Colleor Cutoff Current ICBO 1.0 G01CB = 10 V, IE = 0
Emitter Cutoff Current IEBO 1.0 G01EB = 1.0 V, IC = 0
DC Current Gain hFE*0 VCE = 10 V, IC = 20 mA
Gain Bandwidth Produ fT 7 GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre** 0.55 1.0 pF VCB = 10 V, IE = 0, f = 1.0 MHz
Insertion Power Gain G01S21eG01
2
11.5 dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
ise Figure NF 1.1 2.0 dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW G03 350 G01s, Duty Cycle G03 2 %
** The emitter terminal and the case shall be conneed to the guard terminal of the three-terminal capacitance bridge.
hFE Clification
Cl R23/Q * R24/R * R25/S *
Marking R23 R24 R25
hFE 50 to 100 80 to 160 125 to 250 * Old Specification / New Specification
PACKAGE DIMENSIONS
(Units: mm)
1.5
2
1
3
Marking
PIN CONNEIONS
1.
2.
3.
Emitter
Base
Colleor
2.8&plun;0.2
2.9&plun;0.2
1.1 to 1.4
0 to 0.1
0.95
0.3
0.95
0.4
+0.1 ?
0.05


0.4
+0.1 ?
0.05
0.16
+0.1 ?
0.06
0.65
+0.1
?0.15
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